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Rapid Thermal Annealing Effects on Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots Capped by InAIAs/InGaAs Layers
引用本文:吕威,黎大兵,张子旸,李超荣,张泽,徐波,王占国.Rapid Thermal Annealing Effects on Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots Capped by InAIAs/InGaAs Layers[J].中国物理快报,2005,22(4):967-970.
作者姓名:吕威  黎大兵  张子旸  李超荣  张泽  徐波  王占国
作者单位:[1]BeijingLaboratoryofElectronMicroscopy,InstituteofPhysicsandCenterforCondensed~latterPhysics,ChineseAcademyofSciences,POBox603,Beijing100080 [2]KeyLaboratoryofSemiconductorMaterialsScience,InstituteofSemiconductors,ChineseAcademyofSciences,POBox912,Beijing100083 [3]BeijingUniversityofTechnology,Beijing100022
摘    要:Effects of rapid thermal annealing on the optical and structural properties of self-assembled InAs/GaAs quantum dots capped by the InAlAs/InGaAs combination layers are studied by photoluminescence and transmission electron microscopy. The photoluminescence measurement shows that the photoluminescence peak of the sample after 850℃ rapid thermal annealing is blue shifted with 370meV and the excitation peak intensity increases by a factor of about 2.7 after the rapid thermal annealing, which indicates that the InAs quantum dots have experienced an abnormal transformation during the annealing. The transmission electron microscopy shows that the quantum dots disappear and a new InAlGaAs single quantum well structure forms after the rapid thermal annealing treatment. The transformation mechanism is discussed. These abnormal optical properties are attributed to the structural transformation of these quantum dots into a single quantum well.

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