| Effect of Annealing on Structural and Magnetic Properties of a Thick （Ga,Mn）As Layer |
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| 引用本文： | 邓加军,赵建华,蒋春萍,张焱,牛智川,杨富华,吴晓光,郑厚植.Effect of Annealing on Structural and Magnetic Properties of a Thick （Ga,Mn）As Layer[J].中国物理快报,2005,22(2):466-468. |
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| 作者姓名： | 邓加军 赵建华 蒋春萍 张焱 牛智川 杨富华 吴晓光 郑厚植 |
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| 作者单位： | [1]StateKeyLaboratoryforSuperlatticesandMicrostructures,InstituteofSemiconductors,ChineseAcademyofSciences,POBox912,Beijing100083 [2]SchoolofPhysics,PekingUniversity,Beijing100871 |
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| 摘 要： | We investigate effects of annealing on magnetic properties of a thick (Ga,Mn)As layer, and find a dramatic increase of the Curie temperature from 65 to 115K by postgrowth annealing for a 500-nm (Ga,Mn)As layer.Auger electron spectroscopy measurements suggest that the increase of the Curie temperature is mainly due to diffusion of Mn interstitial to the free surface. The double-crystal x-ray diffraction patterns show that the lattice constant of (Ga,Mn)As decreases with increasing annealing temperature. As a result, the annealing induced reduction of the lattice constant is mainly attributed to removal of Mn interstitial.
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| 关 键 词： | 铁磁半导体 砷 退火效应 磁性构造 薄膜厚度 |
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