Electronic Properties of Red P-Type Tl2S5 Single Crystals |
| |
作者姓名: | G.A.Gamal M.AbouZied A.A.Ebnalwaled |
| |
作者单位: | DepartmentofPhysics,FacultyofScience,SouthValleyUniversity,Qena83511,Egypt |
| |
摘 要: | Single crystals of red Tl2S5 were prepared by a special modified vertical Bridgman and Stockbarger technique.This growth was performed in our laboratory. The influences of temperature on the electrical conductivity, Hall mobility, carrier concentration, and thermoelectric power (TEP) were carried out in the temperature range 277-413K. Throughout these measurements, various physical parameters such as effective mass of charge carriers,carrier mobility, diffusion coefficient, and the relaxation time for both majority and minority carriers were found.
|
关 键 词: | 电学性质 五硫化二铊 简单晶体 生长工艺 |
本文献已被 维普 等数据库收录! |
|