| Influence of Growth Temperature and Trimethylindium Flow of InGaN Wells on Optical Properties of InGaN Multiple Quantum-Well Violet Light-Emitting Diodes |
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| 作者姓名： | 李忠辉 于彤军 杨志坚 童玉珍 张国义 冯玉春 郭宝平 牛憨笨 |
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| 作者单位： | [1]KeyLaboratoryofOptoelectronicDevicesandSystems（MinistryofEducation）,InstituteofOptoelectronics,ShenzhenUniversity,Shenzhen518060 [2]StateKeyLaboratoryforMesoscopicPhysics,SchoolofPhysics,PekingUniversity,Beijing100871 |
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| 摘 要： | An InGaN multiple-quantum-well (MQW) violet-light-emitting diode (LED) is grown by low-pressure metalorganic chemical vapour deposition. It is found that photoluminescence wavelength of the InGaN MQW violet LED is lengthened with increasing growth temperature and with the increasing trimethylindium flow of the InGaN wells. The electroluminescence peak wavelength of the violet LED are about 401 nm with full width at half maximum of 14nm, and the output power in injection current of 2OmA at room temperature is 4.1mW.
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| 关 键 词： | 铟镓氮材料 量子阱 蓝色发光二极管 低压金属组织化学气相沉积法 光致发光 |
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