| Fabrication Process of Sol-Gel Spin Coating for SrBi2Ta2O9 Films Applied to FeRAM |
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| 作者姓名： | 贾泽 任天令 张志刚 刘天志 闻心怡 谢丹 刘理天 |
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| 作者单位： | Institute of Microelectronics, Tsinghua University, Beijing 100084 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant No 90407023, and the National High Technology Programme of China under Grant No 2004AA404240. |
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| 摘 要： | We investigate SrBi2 Ta2 O9 （SBT） films prepared by the sol-gel spin method with different spin rates or different anneal conditions for the first layer of SBT, as promising ferroelectric layer materials applied to ferroelectric random access memory （FeRAM）. All the specimens in this experiment have similar SBT crystal orientations of （115）, （020）, （220）, and （135）. The Pt/SBT/Pt capacitor with coating of 3000rpm spin rate has a perfect rectangle shape of hysteresis loops, remanent polarization of 7.571μC/cm^2 and coercive voltage of 0.816 V at 5 V voltage amplitude. These characteristics are better than those with coating of 3500rpm spin rate, which is attributed to the influence for thickness and grain size of the film from depressed spin rate. Slow-rate anneal in the furnace for the first layer of SBT can improve the crystallization processes and properties for SBT layers slightly, compared with rapid thermal annealing. The ion damage from etching for the top electrode can influence leakage current characteristics of the Pt/SBT/Pt capacitor at positive voltage bias.
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| 关 键 词： | 制作过程 自旋 SrBi2Ta2O9薄膜 退火条件 |
| 收稿时间： | 2006-02-17 |
| 修稿时间： | 2006-02-17 |
Fabrication Process of Sol-Gel Spin Coating for SrBi2Ta2O9 Films Applied to FeRAM |
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| JIA Ze, REN Tian-Ling, ZHANG Zhi-Gang, LIU Tian-Zhi, WEN Xin-Yi, XIE Dan, LIU Li-Tian.Fabrication Process of Sol-Gel Spin Coating for SrBi2Ta2O9 Films Applied to FeRAM[J].Chinese Physics Letters,2006,23(7):1943-1946. |
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| Authors: | JIA Ze REN Tian-Ling ZHANG Zhi-Gang LIU Tian-Zhi WEN Xin-Yi XIE Dan LIU Li-Tian |
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