| Optical and Electronic Properties of InGaN／GaN Multi—Quantum—Wells Near—Ultraviolet Lighting—Emitting—Diodes Grown by Low—Pressure Metalorganic Vapour Phase Epitaxy |
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| 引用本文： | 李忠辉,杨志坚,秦志新,童玉珍,于彤军,陆曙,杨华,张国义.Optical and Electronic Properties of InGaN／GaN Multi—Quantum—Wells Near—Ultraviolet Lighting—Emitting—Diodes Grown by Low—Pressure Metalorganic Vapour Phase Epitaxy[J].中国物理快报,2003,20(8):1350-1352. |
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| 作者姓名： | 李忠辉 杨志坚 秦志新 童玉珍 于彤军 陆曙 杨华 张国义 |
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| 作者单位： | StateKeyLaboratoryforMesoscopicPhysics,SchoolofPhysics,PekingUniversity,Beijing100871ResearchCenterforWideBand-gapSemiconductor,PekingUniversity,Beijing100871 |
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| 摘 要： | The near-ultraviolet lighting-emitting-diodes (UV-LEDs) with the InGaN/GaN multi-quantum-well (MQW) structure were grown by low-pressure metalorganic vapour phase epitaxy. The double crystal x-ray diffraction revealed a distinct second-order satellite peak. The near-ultraviolet InGaN/GaN MQW LEDs have been successfully fabricated to emit at 401.2nm with narrow FWHM of 14.3nm and the forward voltage of 3.6 V at 20 mA injection current at room temperature. With increasing forward current from l 0 mA to 50 mA, the redshift of the peak wavelength was observed due to the band-gap narrowing caused by heat generation.
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| 关 键 词： | 光学性质 电学性质 InGaN／GaN 近紫外线辐射发光二极管 氮化镓 氮镓铟化合物 半导体 汽相外延生长 低压 多层量子体系 |
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