Improvement of Properties of p-GaN by Mg Delta Doping |
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作者姓名: | 潘尧波 杨志坚 陆羽 陆敏 胡成余 于彤军 胡晓东 张国义 |
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作者单位: | SchoolofPhysicsandStateKeyLaboratoryforMesoscopicPhysics,ResearchCentreforWideGapSemiconductor,PekingUniversity,Beijing100871 |
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摘 要: | The Mg-delta-doped GaN structure has been grown by low-pressure metalorganic chemical vapour deposition.The Hall-effect measurements reveal that the electrical properties are enhanced. The hole concentration is enhanced twice and hole mobility is enhanced three times by Mg-delta doping. Both the etch pit density data and the x-ray diffraction data demonstrate that Mg-delta doping can reduce the threading dislocation density of p-type GaN epilayer.
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关 键 词: | 半导体材料 P型氮化镓材料 镁掺杂 低压金属组织化学气相沉积法 霍尔效应测量 |
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