| Abstract: | GaAs has been widely used to fabricate a variety of optoelectronic devices by virtue of its superior performance,and it is very important to accurately measure its electrical and optical properties.In this study,a semiinsulation(SI) GaAs wafer is investigated by the terahertz(THz) non-destructive testing technology.Using an air biased coherent generation and detection THz time domain spectroscopy system,the THz time domain waveform and spectrum of SI-GaAs are obtained by the time domain spectroscopy module,and its opticalelectrical characteristics including complex refractive index,permittivity and dielectric loss angle are calculated.Its carrier lifetime is measured by the optical-pump THz-probe module,and the THz pulse induced intervalley scattering in photo-excited SI-GaAs is discussed. |
