| A New silicon—on—Insulator Structure of Metal—Oxide—Semiconductor Field Effect Transistor to Reduce Self—Heating Effect |
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| 引用本文： | 林青,张正选,等.A New silicon—on—Insulator Structure of Metal—Oxide—Semiconductor Field Effect Transistor to Reduce Self—Heating Effect[J].中国物理快报,2003,20(1):158-163. |
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| 作者姓名： | 林青 张正选 |
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| 作者单位： | [1]StateKeyLaboratoryofFunctionalMaterialsforInformatics,ShanghaiInstituteofMicrosystemandInformationTechnology,CHineseAcademyofSciences,Shanghai200050 [2]StateKeyLaboratoryofFunctiona,ShanghaiInstituteofMicrosystemandInformationTechnology,CHineseAcademyofSciences,Shanghai200050 |
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| 摘 要： | A new silicon-on-insulator(SOI)device stucture is proposed.This new design provides a new path to reduce the temperature of the channel of SOI metal-oxide-semiconductor field effect transistor(MOSFET).The device has been verified in two-dimensional device simulation,The new structure reduces the self-heating effect of SOI MOSFET and decreases the negative differential transconductance.
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| 关 键 词： | 金属氧化物半导体 场效应晶体管 SOI工艺 |
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