Structure Properties of MgxZn1-xO Films Deposited at Low Temperature |
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作者姓名: | 张锡健 马洪磊 王卿璞 马谨 宗福建 肖洪地 计峰 |
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作者单位: | SchoolofPhysicsandMicroelectronics,ShandongUniversity,Jinan250100 |
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摘 要: | MgxZn1-xO films (x = 0.23) have been prepared on silicon substrates by radio-frequency magnetron sputtering at 80℃. The structure properties of Mgx Zn1-xO films are studied using x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), x-ray photoelectron spectroscopy and Raman spectra. The analysis of XRD and HRTEM indicates that the Mgx Zn1-xO films have hexagonal wurtzite single-phase structures and a preferred orientation with the c axis perpendicular to the substrates. Raman spectra of ZnO and MgxZn1-xO films reveal that the MgxZn1-xO films have not only the hexagonal wurtzite structure but also higher crystalline quality than ZnO films.
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关 键 词: | 结构性质 MgxZn1-xO 薄膜沉降 低温条件 |
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