Time—Resolved Photoluminescence Studies of AlInGaN Alloys |
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引用本文: | 董逊,黄劲松,黎大兵,刘祥林,徐钟英,王占国.Time—Resolved Photoluminescence Studies of AlInGaN Alloys[J].中国物理快报,2003,20(7):1148-1150. |
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作者姓名: | 董逊 黄劲松 黎大兵 刘祥林 徐钟英 王占国 |
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作者单位: | [1]KeyLaboratoryofSemiconductorMaterials,InstituteofSemiconductors,ChineseAcademyofSciences,Beijing100083 [2]StateKeyLaboratoryforSuperltticesandMicrostructures,InstituteofSemiconductors,ChineseAcademyofSciences,Beijing100083 |
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摘 要: | We study the two samples of AlInGaN,i.e.,1-μm Gan grown at 1030℃ on the buffer and followed by a 0.6μm-thick epilayer of AlInGaN under the low pressure of 76 Torr and the AlInGaN layer deposited diectly on the buffer layer without the high-temperature GaN layer,by temperature-dependent photoluminescence(PL) spectroscopy and picosecond time-resolved photoluminescence(TRPL) spectroscopy.The TRPL signals of both the samples were fitted well as a stretched exponential decay at all temperatures,indicating significant disorder in the material.We attribute the disorder to nanoscale quantum dots or discs of high indium concentration.Temperature dependence of dispersive exponent β shows that the stretched exponential decay of the two samples comes from dfferent mechanisms.The different depths of the localization potential account for the difference,which is illustrated by the results of temperature dependence of radiative recombination lifetime and PL peak energy.
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关 键 词: | AlInGaN合金 铝铟镓氮合金 光致发光光谱 光学性质 化合物半导体 |
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