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Effects of Dislocation on High Temperature Transport Characteristics of Unintentionally Doped GaN
作者姓名:王茂俊  沈波  许福军  王彦  许谏  黄森  杨志坚  秦志新  张国义
作者单位:State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871
基金项目:Supported by the National Natural Science Foundation of China under Grant Nos 60325413 and 60628402, the National Basic Research Programme of China under Grant Nos 2006CB604908 and 2006CB921607, the Cultivation Fund of the Key Scientific and Technical Innovation Project of the Ministry of Education of China (No 705002), the Research Fund for the Doctoral Programme of Higher Education in China (20060001018), and the Beijing Natural Science Foundation (No 4062017).
摘    要:High temperature transport characteristics of unintentionally doped GaN have been investigated by means of high temperature Hall measurements from room temperature to 500^o C. The increment of electron concentration from room temperature to 500^o C is found to vary largely for different samples. The dispersion of temperature dependence of electron concentration is found to be directly proportional to the density of dislocations in GaN layers calculated by fitting the FWHM of the rocking curves in x-ray diffraction measurements (XRD). The buildup levels in persistent photoconductivity (PPC) are also shown to be directly proportionM to the density of dislocations. The correlation of XRD, Hall and PPC results indicate that the high temperature dependence of electron density in unintentional doped GaN is directly dislocation related.

关 键 词:氮化镓  高温  位错  性能
收稿时间:2007-1-12
修稿时间:2007-01-12

Effects of Dislocation on High Temperature Transport Characteristics of Unintentionally Doped GaN
WANG Mao-Jun,SHEN Bo,XU Fu-Jun,WANG Yan,XU Jian,HUANG Sen,YANG Zhi-Jian,QIN Zhi-Xin,ZHANG Guo-Yi.Effects of Dislocation on High Temperature Transport Characteristics of Unintentionally Doped GaN[J].Chinese Physics Letters,2007,24(6):1682-1685.
Authors:WANG Mao-Jun  SHEN Bo  XU Fu-Jun  WANG Yan  XU Jian  HUANG Sen  YANG Zhi-Jian  QIN Zhi-Xin  ZHANG Guo-Yi
Institution:State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871
Abstract:High temperature transport characteristics of unintentionally doped GaN have been investigated by means of high temperature Hall measurements from room temperature to 500°C. The increment of electron concentration from room temperature to 500°C is found to vary largely for different samples. The dispersion of temperature dependence of electron concentration is found to be directly proportional to the density of dislocations in GaN layers calculated by fitting the FWHM of the rocking curves in x-ray diffraction measurements (XRD). The buildup levels in persistent photoconductivity (PPC) are also shown to be directly proportional to the density of dislocations. The correlation of XRD, Hall and PPC results indicate that the high temperature dependence of electron density in unintentional doped GaN is directly dislocation related.
Keywords:71  20  Nr  73  50  -h  73  61  Ey
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