| Strain Effect on Photoluminescences from InGaN MQWs with Different Barriers Grown by MOCVD |
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| 作者姓名： | 于彤军 康香宁 潘尧波 秦志新 陈志忠 杨志坚 张国义 |
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| 作者单位： | [1]Research Center for Wide Band Gap Semiconductors, Peking University 100871 [2]State Key Laboratory of Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing 100871 |
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| 基金项目： | Supported by National Natural Science Foundation of China under Grant Nos 60676032, 60276010, 60376025, 60325413, and 60325413. |
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| 摘 要： | InGaN/GaN MQWs, InGaN/AlGaN MQWs and InGaN/AlInGaN MQWs are grown on （0001） sapphire substrates by MOCVD. Membrane samples are fabricated by laser lift-off technology. The photoluminescence spec-ra of membranes show a blue shift of peak positions in InGaN/GaN MQWs, a red shift of peak positions in InGaN/AlGaN MQWs and no shift of peak positions in InGaN/AIlnGaN MQWs from those of samples with substrates. Different changes in Raman scattering spectra and HR-XRD （0002） profile of InGaN/AlInGaN MQWs, from those of InGaN/GaN MQWs and InGaN/AlGaN MQWs, are observed. The fact that the strain changes differently among InGaN MQWs with different barriers is confirmed. The AIlnGaN barrier could adjust the residual stress for the least strain-induced electric field in InGaN/AIlnGaN quantum wells.
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| 关 键 词： | 疲劳效应 光致发光 屏障 蓝宝石基底 |
| 修稿时间： | 2006-11-21 |
Strain Effect on Photoluminescences from InGaN MQWs with Different Barriers Grown by MOCVD |
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| YU Tong-Jun,KANG Xiang-Ning,PAN Yao-Bo,QIN Zhi-Xin,CHEN Zhi-Zhong,YANG Zhi-Jian,ZHANG Guo-Yi.Strain Effect on Photoluminescences from InGaN MQWs with Different Barriers Grown by MOCVD[J].Chinese Physics Letters,2007,24(5):1365-1367. |
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| Authors: | YU Tong-Jun KANG Xiang-Ning PAN Yao-Bo QIN Zhi-Xin CHEN Zhi-Zhong YANG Zhi-Jian ZHANG Guo-Yi |
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| Institution: | 1Research Center for Wide Band Gap Semiconductors, Peking University, 100871; 2State Key Laboratory of Artiticial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing 100871 |
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| Abstract: | InGaN/GaN MQWs, InGaN/AlGaN MQWs and InGaN/AlInGaN MQWs are grown on (0001) sapphire substrates by MOCVD. Membrane samples are fabricated by laser lift-off technology. The photoluminescence spectra of membranes show a blue shift of peak positions in InGaN/GaN MQWs, a red shift of peakpositions in InGaN/AlGaN MQWs and no shift of peak positions in InGaN/AlInGaN MQWs from those of samples with substrates. Differentchanges in Raman scattering spectra and HR-XRD (0002) profile of InGaN/AlInGaN MQWs, from those of InGaN/GaN MQWs and InGaN/AlGaN MQWs, are observed. The fact that the strain changes differently among InGaN MQWs with different barriers is confirmed. The AlInGaN barrier could adjust the residual stress for the least strain-induced electric field in InGaN/AlInGaN quantum wells. |
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| Keywords: | 78 55 Cr 78 67 De |
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