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High-Power Electroabsorption Modulator Using Intrastep Quantum Well
作者姓名:程远兵  潘教青  周帆  朱洪亮  赵玲娟  王圩
作者单位:State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing
基金项目:Supported by the National Natural Science Foundation of China under Grant Nos 90401025 and 60476009, and the National Hi-Tech Research and Development Program of China under Grant No 2006AA01Z256.
摘    要:An electroabsorption modulator using the intrastep quantum well (IQW) active region is fabricated for optical network systems. The strain-compensated InGaAsP/InGaAsP IQW shows good material quality and improved modulation properties, high extinction ratio efficiency IOdB/V and low capacitance (〈 0.42 pF), with which an ultra high frequency (〉 15 GHz) can be obtained. High-speed measurement under high-power excitation shows no power saturation up to excitation power of 21 dBm. To our knowledge, the input optical power is the highest reported for multi-quantum well EAMs without heat sinks.

关 键 词:高能量电吸附  调制器  量子  物理
收稿时间:2007-3-13
修稿时间:2007-03-13

High-Power Electroabsorption Modulator Using Intrastep Quantum Well
CHENG Yuan-Bing,PAN Jiao-Qing,ZHOU Fan,ZHU Hong-Liang,ZHAO Ling-Juan,WANG Wei.High-Power Electroabsorption Modulator Using Intrastep Quantum Well[J].Chinese Physics Letters,2007,24(7):2128-2130.
Authors:CHENG Yuan-Bing  PAN Jiao-Qing  ZHOU Fan  ZHU Hong-Liang  ZHAO Ling-Juan  WANG Wei
Institution:State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing
Abstract:An electroabsorption modulator using the intrastep quantum well (IQW)active region is fabricated for optical network systems. The strain-compensated InGaAsP/InGaAsP IQW shows good material quality and improved modulation properties, high extinction ratio efficiency 10dB/V and low capacitance (<0.42pF), with which an ultra high frequency (>15GHz) can be obtained. High-speed measurement under high-power excitation shows no power saturation up to excitation power of 21dBm. To our knowledge, the input optical power is the highest reported for multi-quantum well EAMs without heat sinks.
Keywords:85  30  Vw  78  66  -w
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