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Influence of Phase Transition of Starting Materials on Growth of GaN Nanomaterials by CVD
作者姓名:赵梅  陈小龙  王文军  张志华  许燕萍
作者单位:[1]College of Materials Science and Engineering, Beijing University of Technology, Beijing 100022 [2]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
基金项目:Supported by Scientific Research Foundation for Doctors of Beijing University of Technology under Grant, No 52009013200501.
摘    要:Ground by mechanical ball milling under certain conditions, β-Ga2O3 powders can transit to ε-Ga2O3 ones. As starting materials, Ga2O3 powders treated by different methods are used to prepare GaN nanomaterials. It is found that the morphologies of GaN nanomaterials are quite different due to the phase transition of Ga2O3 from β-Ga203 to ε-Ga203.

关 键 词:CVD  相位转移  初始材料  纳米材料
收稿时间:2007-3-22
修稿时间:2007-03-22

Influence of Phase Transition of Starting Materials on Growth of GaN Nanomaterials by CVD
ZHAO Mei,CHEN Xiao-Long,WANG Wen-Jun,ZHANG Zhi-Hua,XU Yan-Ping.Influence of Phase Transition of Starting Materials on Growth of GaN Nanomaterials by CVD[J].Chinese Physics Letters,2007,24(8):2401-2404.
Authors:ZHAO Mei  CHEN Xiao-Long  WANG Wen-Jun  ZHANG Zhi-Hua  XU Yan-Ping
Institution:1 College of Materials Science and Engineering, Beijing University of Technology, Beijing 100022 ;2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Abstract:
Keywords:81  05  Ea  81  16  -c
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