General model for the functional dependence of defect concentration on oxygen potential in mixed conducting oxides |
| |
Authors: | Keith L Duncan Eric D Wachsman |
| |
Institution: | (1) Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611-6400, USA |
| |
Abstract: | To understand and engineer applications for mixed conducting oxides, it is desirable to have explicit, analytical expressions
for the functional dependence of defect concentration and transport properties on the partial pressure of the external gas
phase. To fulfill this need, general expressions are derived for the functional dependence of defect concentration on the
oxygen partial pressure () for the mixed ionic electronic conductors. The model presented in this paper differs from expressions obtained using the
popular Brouwer approach because they are continuous across multiple Brouwer regions.
|
| |
Keywords: | Defect distribution Ceria Analytical model Mixed ionic electronic conductors Defect equilibria |
本文献已被 SpringerLink 等数据库收录! |