Investigation of the spin generation using the perturbation theory in the long wavelength limit

An investigation of the electronic spin-generation in gallium arsenide is performed using the perturbation theory of the spin transport model in the long wavelength limit, where electron–electron and electron–phonon interactions are ignored. The spin polarizations of the conduction-band-electrons in dependences of the excited one- and two-photon energies are estimated. For both cases, the spin-polarization is found to depolarize for excitation energies equal to or larger than the energy gap of the split-off band to the conduction band. The results, however, show that an enhancement of the spin-polarization is achieved by multiphoton excitation of the bulk semiconductors. The calculated results are compared with those obtained in recent experiments. A good agreement between theory and experiment is obtained.