Influence of delta doping on intersubband transition and absorption in AlGaN/GaN step quantum wells for terahertz applications |
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| Institution: | 1. Department of Solid State Physics, Yerevan State University, Alex Manoogian 1, Yerevan 0025, Armenia;2. National University of Architecture and Construction of Armenia, Teryan 105, 0009 Yerevan, Armenia;1. Amirkhanov Institute of Physics Russian Academy of Sciences, Dagestan Science Centre, Makhachkala, Russia;2. Prokhorov General Physics Institute Russian Academy of Sciences, Moscow, Russia;3. Dagestan States University, Makhachkala, Russia;1. Photonics–Electronics Group, Aras International Campus, University of Tabriz, Tabriz 51665-163, Iran;2. Photonics–Electronics Group, Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz 51666-14766, Iran;3. School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley, WA 6009, Australia;1. Laboratoire des Interfaces et des Matériaux avancés (LIMA), Tunisia;2. Laboratoire de Micro-Optoélectronique et Nanostructures (LMON), Tunisia;3. Unité de Recherche sur les Hétéro-Epitaxies et Applications (URHEA), Tunisia;4. Université Monastir, Faculté des Sciences de Monastir, Département de Physique, Avenue de l’environnement, 5019 Monastir, Tunisia;1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;2. School of Physics and Information Technology, Shaanxi Normal University, Xi''an 710062, China;3. Graduate School of the Chinese Academy of Sciences, Beijing 100049, China |
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| Abstract: | Effects of delta doping location and density on intersubband transitions in AlGaN/GaN step quantum wells for terahertz (THz) applications have been investigated by solving Schrödinger and Poisson equations self-consistently. It shows that delta doping near the GaN well/AlGaN step well interface causes a blue-shift, while delta doping in the barrier or near barrier/GaN well and barrier/step well interfaces cause a red-shift first and then a blue-shift with increasing doping density. The shifts are attributed to the combination of many body effect and internal field modulation effect, and can be more than 200% or 70% of the e1–e2 transition energy, as for blue-shift or red-shift, respectively. In addition, the influences of delta-doping location and density on the absorption coefficient are also investigated in detail. Delta doping at the middle of a layer is found much more desirable over uniform-doping in order to improve the absorption coefficient, especially in the step well. |
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