| Abstract: | We have investigated the carrier relaxation mechanism in InGaAs/GaAs quantum dots by photoluminescence excitation (PLE) spectroscopy. Near-field scanning optical microscope successfully shows that a PLE resonance at a relaxation energy of 36 meV can be seen in all single-dot luminescence spectra, and thus can be attributed to resonant Raman scattering by a GaAs LO phonon to the excitonic ground state. In addition, a number of sharp resonances observed in single-dot PLE spectra can be identified as resonant Raman features due to localized phonons, which are observed in the conventional Raman spectrum. The results reveal the mechanism for the efficient relaxation of carriers observed in self-assembled quantum dots: the carriers can relax within the continuum states, and make transitions to the excitonic ground state by phonon emission. |
