Enhanced photoluminescence intensity of 1.3-μm multi-layer InAs/InGaAs dots-in-well structure using the high growth temperature spacer layer step |
| |
| Authors: | HY Liu TJ Badcock IR Sellers WM Soong KM Groom M Hopkinson DJ Mowbray MS Skolnick |
| |
| Institution: | aDepartment of Electronic & Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK;bDepartment of Physics & Astronomy, University of Sheffield, Sheffield S3 7RH, UK |
| |
| Abstract: | The effects of growth temperature of the GaAs spacer layers (SPLs) on the photoluminescence (PL) efficiency of multi-layer GaAs-based 1.3-μm InAs/InGaAs dots-in-well (DWELL) structures have been investigated. It is found that the PL intensity of DWELLs is enhanced by incorporating a high growth temperature step for GaAs SPLs. This improved PL efficiency could be understood in term of reducing the non-radiative recombination centers. An extremely low continuous-wave room-temperature threshold current density of 35 A/cm2 is achieved for an as-cleaved 5-layer device with emission at 1.31 μm by using this growth technique. |
| |
| Keywords: | Quantum dots 1 3 μ m InAs/InGaAs dot-in-well structure Semiconductor lasers High growth temperature spacer layer |
| 本文献已被 ScienceDirect 等数据库收录！ |
