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Efficient silicon light emitting diodes made by dislocation engineering |
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| Authors: | M A Loureno M S A Siddiqui R M Gwilliam G Shao K P Homewood |
| Institution: | a School of Electronics and Physical Sciences, University of Surrey, Guildford, Surrey, GU2 7XH, UK;b School of Engineering, University of Surrey, Guildford, Surrey, GU2 7XH, UK |
| Abstract: | Efficient silicon-based light emitting diodes have been fabricated using the dislocation engineering method. Crucially this technique uses entirely conventional ULSI processes. The devices were fabricated by conventional low-energy boron implantation into silicon substrates followed by high-temperature annealing, and strong silicon band edge luminescence was observed. Dislocation engineering is also shown to reduce the thermal quenching for other material systems. Dislocation engineered β-FeSi2 and Er light emitting devices were fabricated and room temperature electroluminescence at 1.5 μm was observed in both cases. |
| Keywords: | Silicon Electroluminescence Dislocation engineering Light emitting devices Iron disilicide Erbium |
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