Built-in-polarization and thermal conductivity of InxGa1-xN/GaN heterostructures |
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| Institution: | 1. Photonics department, Research Institute for Applied Physics & Astronomy(RIAPA), University of Tabriz, Tabriz, Iran;2. Aras International Campus - University of Tabriz, Tabriz, Iran;3. School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley, WA 6009, Australia;1. Laboratory of Laboratory of Spectroscopic and Optical Characterization of Materials, Faculty of Sciences, University of Sfax, BP1171, 3018 Sfax, Tunisia;2. Institut des Molécules et Matériaux du Mans(IMMM), LUNAM Université, Université du Maine, CNRS UMR 6283, Avenue Olivier Messiaen, F-72085 Le Mans Cedex 09, France |
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| Abstract: | The effect of built-in-polarization (BIP) field on thermal properties of InxGa1−xN/GaN heterostructure has been investigated. The thermal conductivity k of InxGa1−xN alloy has been estimated using Callaway's formula including the BIP field for In content x = 0, 0.1, 0.3, 0.5 and 0.9. This study reports that irrespective of In content, the room temperature k of InxGa1−xN/GaN heterostructure is enhanced by BIP field. The result predicts the existence of a characteristic temperature Tp at which both thermal conductivities (including and excluding BIP field) show a crossover. This gives signature of pyroelectric nature of InxGa1−xN alloy which arises due to variation of polarization with temperature indicating that thermal conductivity measurement can reveal pyroelectric nature. The pyroelectric transition temperature of InxGa1−xN alloy has been predicted for various x. The composition dependent nature of room temperature k for x = 0.1 and 0.5 are in line with prior experimental studies. The result can be used to minimize the self heating effect in InxGa1−xN/GaN heterostructures. |
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| Keywords: | Built-in-polarization Phonon Thermal conductivity Pyroelectricity |
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