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Thermal dissociation of excitons in a type-I GaAs/AlAs superlattice studied by time-resolved photoluminescence measurements
Authors:Miki Yamanaka  Hiromitsu Itoh  Masato Morifuji  Chihiro Hamaguchi
Abstract:In order to investigate thermal properties of excitons, we have performed time-resolved photoluminescence (PL) measurements for a type-I (GaAs)15/(AlAs)15 superlattice. At low temperatures, PL signals show ordinal exponential time decay, whereas at high temperatures, the PL shows power decay. Such change of PL signals is understood by considering thermal dissociation of exciton into account. At low temperatures, recombination of bound excitons generates PL which shows exponential decay. At temperatures higher than the exciton binding energy, correlation between electrons and holes disappears. Recombination of free excitons causes PL which decays by a power function. By means of the least-squares fitting, we evaluate the portion of bound excitons, recombination time of bound and free excitons as functions of temperatures.
Keywords:Time-resolved photoluminescence  GaAs/AlAs superlattice  Exciton
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