Strong photoluminescence and laser operation of InAs quantum dots covered by a GaAsSb strain-reducing layer |
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Authors: | Kouichi Akahane Naokatsu Yamamoto Shin-ichiro Gozu Naoki Ohtani |
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Institution: | National Institute of Information and Communications Technology (NICT), 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan |
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Abstract: | GaAsSb strain-reducing layers (SRLs) are applied to cover InAs quantum dots (QDs) grown on GaAs substrates. The compressive strain induced in InAs QDs is reduced due to the tensile strain induced by the GaAsSb SRL, resulting in a redshift of photoluminescence (PL) peaks of the InAs QDs. A strong PL signal around a wavelength of 1.3 μm was observed even at room temperature. A laser diode containing InAs QDs with GaAsSb SRLs in the active region was fabricated, which exhibits laser oscillation in pulsed operation at room temperature. These results indicate that GaAsSb SRLs have a high potential for fabricating high efficient InAs QDs laser diodes operating at long-wavelength regimes. |
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Keywords: | Quantum dots Quantum dot laser Strain-reducing layer GaAsSb |
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