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Conventional interconnects: the crisis
Institution:1. State University of Londrina, Rod. Celso Garcia Cid, km 380, 86057-970 Londrina, PR, Brazil;2. University of the Ryukyus, Okinawa, Japan;3. Murata Animal Hospital, Mobara, Chiba, Japan;1. Center for Interdisciplinary Research in Animal Health, Faculty of Veterinary Medicine, University of Lisbon, Avenida da Universidade Técnica, 1300-477 Lisbon, Portugal;2. Faculty of Veterinary Medicine Teaching Hospital, University of Lisbon, Avenida da Universidade Técnica, 1300-477 Lisbon, Portugal;3. Oncovet, Avenida de Berna, 35, 1050-038 Lisbon, Portugal
Abstract:As the design rules drop below 200 nm, a variety of problems emerges such as RC delay, electromigration resistance and heat dissipation exacerbated by increasing chip power. The use of Copper should solve resistivity and electromigration problems but reliability issue with respect to an efficient diffusion barrier is a concern. Low- k dielectrics allowing capacitance reduction have low thermal conductivity thus poor heat dissipation capability. Integration of Copper and low- k dielectrics is intensively studied world wide. The following gives an overview of the international state of the art to overcome critical issues of advanced interconnects.
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