| 半导体照明发光二极管(LED)芯片制造技术及相关物理问题 |
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| 引用本文： | 李刚.半导体照明发光二极管(LED)芯片制造技术及相关物理问题[J].物理,2005,34(11):827-833. |
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| 作者姓名： | 李刚 |
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| 作者单位： | 方大集团股份有限公司,方大国科光电技术有限公司,深圳,518055 |
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| 摘 要： | 以化合物半导体材料为发光元件的半导体固态照明正引发人类照明史上的又一次伟大革命.目前,局限半导体照明广泛应用的主要技术瓶颈有：出光效率（或外量子效率）,单管最大可发光通量（或最大可工作功率）,单位光通量的成本和发光二极管可正常使用寿命.文章综述和分析了与芯片发光效率（或外量子效率）和单芯最大可发光通量（或最大可工作功率）相关的制造技术和相关物理问题.
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| 关 键 词： | 发光二极管 半导体照片 芯片 氮化镓 |
| 收稿时间： | 2004-12-08 |
| 修稿时间： | 2004-12-082005-04-30 |
Technologies and related physics of LED chips for semiconductor lighting applications |
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| LI Gang.Technologies and related physics of LED chips for semiconductor lighting applications[J].Physics,2005,34(11):827-833. |
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| Authors: | LI Gang |
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| Institution: | China FangDa Group Co. ,Ltd, ShenZhen FangDa GuoKe Optronics Technical Co. ,Ltd, 518055, China |
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| Abstract: | Solid-state lighting based on light emitting diodes made of compound semiconductor materials has created another revolution in the history of the lighting industry.Currently,the major factors restricting broad application of semiconductor lighting devices are the low light extraction efficiency(external quantum efficiency),low light flux(maximum operational power),overall cost per lumen,and reliability or life-time The light extraction efficiency of the chips as well as the light flux of individual devices will be discussed in connection with the chip-processing technologies and the physics involved. |
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| Keywords: | Light emitting diodes Semiconductor lighting Chips GaN |
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