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纳米光刻技术
引用本文:罗先刚,姚汉民,严佩英,陈旭南,冯伯儒.纳米光刻技术[J].物理,2000,29(6):358-360.
作者姓名:罗先刚  姚汉民  严佩英  陈旭南  冯伯儒
作者单位:中国科学院光电技术研究所,微细加工光学技术国家重点实验室,成都,610209
基金项目:国家自然科学基金资助项目
摘    要:纳米科学技术将成为新世纪信息时代的核心。纳米量级结构作为研究微观量子世界的重要基础之一,其制作技术是整个纳米技术的核心基础,已成为当前世界科学研究急需解决的问题。文章针对上前的科技发展情况,介绍了几种纳米光刻技术的实现新途径、发展现状和关键问题。详细阐述了波前工程、电子束光刻、离子束光刻、X射线光刻原子光刻、干涉光刻、极紫外光刻以及157光刻的原理和实现难点。作为下一代各种光刻技术,它们都有望实现

关 键 词:纳米光刻  波前工程  电子束光刻  离子事光刻

NANOLITHOGRAPHY TECHNOLOGY
LUO Xian-Gang,YAO Han-Min,YAN Pei-Ying,CHEN Xu-Nan,FENG Bo-Ru.NANOLITHOGRAPHY TECHNOLOGY[J].Physics,2000,29(6):358-360.
Authors:LUO Xian-Gang  YAO Han-Min  YAN Pei-Ying  CHEN Xu-Nan  FENG Bo-Ru
Abstract:Nanoscale science and technology will become a key issue of the new information century. Nanoscale structures provide an important foundation for studying the microscopic quantum world, thus their fabrication is a task that needs to be addressed urgently.The methods and key issues of several nanolithography technologies are reviewed, with detailed discussions on wavefront engineering and lithographies based on e beams, ion beams, X rays, atoms and interferometry, as well as extreme UV(EUV),157nm and 126nm wavelength lithographies.As next generation lithographies, they all can be used to fabricate nanoscale patterns, but each has its resolution limit. Resolution above 50nm can be realized using 193nm lithography combined with wavefront engineering or interferometric lithography. For 50nm or so resolutions, EUV, 157nm or 126nm lithography can be used whereas e\|beam, ion beam, X ray, or atom lithography can be used to fabricate structures of several nanometers. However, these technologies can only be perfected after other problems relating to the optical system, resist compound and precision control are solved. Future prospects are finally discussed.
Keywords:nanolithography  wavefront engineering  e  beam lithography  ion  beam lithography  X  ray lithography  atom lithography  interferometric lithography  EUV lithography  157nm and 126nm lithography  
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