| 垂直腔面发射半导体微腔激光器 |
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| 引用本文： | 潘炜.垂直腔面发射半导体微腔激光器[J].物理,1999,28(4):210-216. |
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| 作者姓名： | 潘炜 |
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| 作者单位： | [1]西南交通大学计算机与通信工程学院 [2]英国Bath大学物理系 |
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| 摘 要： | 评述了垂直腔面发射半导体激光器研究的最新进展，就其结构特点、应变量子阱结构、超晶格镜面和微腔效应作了简要的论述，探讨了进一步降低半导体激光器阈值的途径，介绍了新型的氧化约束型垂直腔面发射半导体激光器，并对微腔激光器中自发辐射增强效应和三维封闭腔的特性给出了描述，同时展望了该器件的应用及发展前景。
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| 关 键 词： | 垂直腔面发射 半导体激光器 微腔效应 进展 |
VERTICAL CAVITY SURFACE EMITTING LASERS |
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| Pan Wei\ Zhang Xiaoxia\ Luo Bin.VERTICAL CAVITY SURFACE EMITTING LASERS[J].Physics,1999,28(4):210-216. |
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| Authors: | Pan Wei\ Zhang Xiaoxia\ Luo Bin |
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| Abstract: | A review is presented of vertical cavity surface
emitting lasers(VCSELs),outlining the main structural properties strained quantum
wells,microcavity effects,recent developments in the fabrication oxide confined VCSELs,ways to
decrease the threshold current of the increase of spontaneous emission,and the properties of
three dimensionally closed cavities.Finally,the prospects for the application and development
of these lasers are discussed. |
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| Keywords: | VCSELs microcavities effect spontaneous emission strained quantum wells |
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