锗硅表面结构和动态过程的STM研究

尽管作为微电子工业的基础，硅和锗的表面和界面几十年来一直是研究的热点，但和纳米技术等不断提出的问题相比，对它们的了解仍很不够。为此，最近我们用扫描隧道显微镜和低能电子衍射方法，对锗硅表面的稳定性、宏观小面化、纳米小面化、小面化的规律、稳定表面的比自由能、表面原子结构以及表面和亚表面原子的动态过程进行了大量的系统的研究。文章综述已取得的研究结果。这些结果除具有重要的基础意义外，对半导体异质外延生长衬底选择，以及量子线和量子点自组织生长模板的选择都会有帮助。

ATOMIC STRUCTURES AND DYNAMIC PROCESSES OF Ge AND Si SURFACES

Silicon is the basis of the microelectronics industry,and silicon and germanium surfaces and interfaces have been under intensive investigation for several decades.However,compared to the questions that are being raised by nanoscience and technology,our knowledge in this context is still quite incomplete.Accordingly,by means of scanning tunneling microscopy and low\|energy electron diffraction,we have been carrying out a systematic and comparative investigation of the stability,faceting,nanofaceting,surface specific free energy,and atomic structure of high\|index germanium and silicon surfaces,along with some surface dynamic processes.These results are expected to be interesting not only from the point of view of basic science,but should also be helpful to applications such as selection of substrates for semiconductor heteroepitaxial growth and preparation of templates for the growth of nanowires and nanodots.