若干低维材料的拉曼光谱学研究--2004年度国家自然科学二等奖获奖项目介绍

文章扼要介绍了2004年国家自然科学二等奖获奖项目：《若干低维材料的拉曼光谱学研究》．用拉曼光谱研究低维纳米材料,必须对传统拉曼光谱学进行改造,创建新的“低维拉曼光谱学”．该项目通过若干低维材料的研究,为创建低维拉曼光谱学作出了系统的创新性贡献,如最先鉴认出典型低维材料的拉曼指纹谱,发现拉曼光谱的两个基本特征出现“反常”,但证明拉曼散射基本原理在低维体系中依然成立．通过低维拉曼光谱和光发射谱的应用研究,发现了材料的许多新奇物性,如发现超晶格和碳纳米管是类缺陷结构,和极性半导体纳米晶材料具有非晶特性,并提出了多孔硅的“量子限制电化学”形成和“多源量子阱”光发射模型,促进了低维材料和半导体器件的制备．

Introduction of Raman studies on several low-dimensional materials

An introduction to the research project named "Raman studies on several low-dimensional materials" is given.The project was awarded the second class of the Nature Science Prize of China as its outstanding achievements.The one of achievements is the creative contributions to the establishment of low-dimensional Raman spectroscopy,such as the identification of the intrinsic Raman spectra for typical low-dimensional semiconductors and the conformation of availability of Raman scattering principle in the low-dimensional system.In the applied research of low-dimensional Raman spectra,some unique characters of low-dimensional semiconductors are found,e.g.the defect-like nature of superlattice and carbon nano-tubes and the non-crystalline character of polar nano-crystalline semiconductors.As the applications of photoluminescence spectra for porous silicon,the "quantum confinement electrical-chemistry" formation model and the "multi-sources quantum well" light emission model were proposed.All of which are very useful for the developing of low-dimensional materials and semiconductor devices.