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From Si nanowire to SiC nanotube |
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| Authors: | Laurence Latu-Romain Maelig Ollivier Arnaud Mantoux Geoffroy Auvert Odette Chaix-Pluchery Eirini Sarigiannidou Edwige Bano Bernard Pelissier Charbel Roukoss Herv�� Roussel Florian Dhalluin Bassem Salem Nikoletta Jegenyes Gabriel Ferro Didier Chaussende Thierry Baron |
| Institution: | 1. Laboratoire des Technologies de la Micro??lectronique, LTM-CNRS, CEA/LETI/D2NT, 17, Avenue des martyrs, 38054, Grenoble Cedex, France 2. IMEP-LAHC/Grenoble INP, MINATEC, 3, Parvis Louis Neel, BP 257, 38016, Grenoble, France 3. Science et Ing??nierie des Mat??riaux et Proc??d??s, 1130, Rue de la piscine, 38402, Saint Martin d??h??res, France 4. CEA/LETI, 17, Avenue des Martyrs, 38054, Grenoble, France 5. Laboratoire des Mat??riaux et du G??nie Physique Minatec, 3, Parvis Louis N??el, BP 257, 38016, Grenoble, France 6. Laboratoire des Multimat??riaux et Interfaces, Domaine Scientifique de la Doua, Universit?? Claude Bernard Lyon 1 Batiment Berthollet, 22 Avenue Gaston Berger, 69622, Villeurbanne, France |
| Abstract: | Si nanowires (NWs), with diameters of about 800 nm and lengths of about 10 ??m, previously synthesized by the VLS method with gold catalyst, were carburized at 1,100 °C under methane for conversion into SiC nanostructures. These experiments have shown that Si NWs have been transformed into SiC nanotubes (NTs) with approximately the same sizes. Nanotubes?? sidewall thickness varies from 20 to 150 nm depending on the NTs?? height. These SiC nanotubes are hexagonal in shape and polycrystalline. A model of growth based on the out-diffusion of Si through the SiC layer was proposed to explain the transformation from Si nanowires to SiC nanotubes. This model was completed with thermodynamic calculations on the Si?CH2?CCH4?CO2 system and with results from complementary experiment using propane precursor. Routes for obtaining crystalline SiC NTs using this reaction are proposed. |
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