Temperature dependence of optical properties of InAs quantum dots grown on GaAs(113)A and (115)A substrates

We have investigated the temperature dependence of photoluminescence (PL) peak position of InAs self-assembled quantum dots (QDs) grown on GaAs(11N)A (N = 3, 5) substrates. The interband transition energy is calculated by the resolution of the 3D Schrödinger equation for a parallelepipedic InAs QD, with a width of about 8 nm and a height around 3 nm. Experimentally, it was found that the PL spectra quenches at about 160 K. In addition, the full width at half maximum (FWHM) has an abnormal evolution with varying temperature. The latter effect maybe due to the carrier repopulation between QDs. The disorientation of the GaAs substrate and the low width of terraces which was presented in the high index surfaces have an important contribution in the PL spectra. Despite the non-realist chosen shape of QD and the simplest adopted model, theoretical and experimental results revealed a clear agreement.