Suppression of particle generation in a plasma process using a sine-wave modulated rf plasma |
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| Authors: | Nobuki Kashihara Heru Setyawan Manabu Shimada Yutaka Hayashi Chan Soo Kim Kikuo Okuyama Sugeng Winardi |
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| Institution: | (1) Innovation Plaza Hiroshima, Japan Science and Technology Agency, 3-10-23 Kagamiyama, Higashi-Hiroshima 739-0046, Japan;(2) Department of Chemical Engineering, Graduate School of Engineering, Hiroshima University, 1-4-1 Kagamiyama, Higashi-Hiroshima 739-8527, Japan;(3) Department of Chemical Engineering, Faculty of Industrial Technology, Sepuluh Nopember Institute of Technology (ITS), Kampus ITS Sukolilo, Surabaya, 60111, Indonesia |
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| Abstract: | Sine-wave modulated rf plasma has been used to control particle generation and growth in a plasma-enhanced chemical vapor deposition of silicon dioxide thin films using TEOS/O2. The density and the size of particles generated in the plasma are greatly reduced when the plasma is modulated with sine-wave modulation at low modulation frequency (<1000 Hz). In addition, particle contamination on the films is significantly reduced also for nanoparticles, and the film growth rates at the range of modulation frequencies where particle generation are greatly reduced do not decrease appreciably. Compared to its counterpart pulse-wave modulation plasma, the sine-wave modulation plasma has demonstrated a better performance in terms of reduction of particle generation and film contamination, and of film growth rate. Thus, the sine-wave modulation plasma has shown as a promising method to be applied in the production of thin film with a high deposition rate and a low particle contamination. |
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| Keywords: | plasma reactor sine-wave modulation particle generation control nanoparticle |
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