First principles study of <Emphasis Type="Italic">p</Emphasis>-type doping in SiC nanowires: role of quantum effect |
| |
Authors: | Zhiguo Wang Shuwen Xue Jingbo Li Fei Gao |
| |
Institution: | (1) Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu, 610054, People’s Republic of China;(2) Pacific Northwest National Laboratory, MS K8-93, 999, Richland, WA 99352, USA;(3) State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People’s Republic of China |
| |
Abstract: | Using first principles density functional theory calculations, we investigated the X and X–N–X (X = Al and Ga) doped 3C–SiC
nanowires grown along the 111] crystal direction with diameter of 1.00 and 1.33 nm. We found that the ionization energy of
acceptor state is much larger in nanowires than that in the bulk SiC as a result of quantum confinement effect. Simulation
results show that the reduced dimensionality in p-type SiC nanowires strongly reduces the capability of the materials to generate free carriers. It is also found that X–N–X
(X = Al and Ga) complexes are energetically favored to form in the materials and have lower ionization energy than single
doping. It is confirm that codoping is more suitable method for achieving low-resistivity semiconductors either in nano materials
or bulk material. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|