XPS investigation of diffusion of two-layer ZrO2/SiO2 and SiO2/ZrO2 sol–gel films |
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| Authors: | YJ Guo XT Zu BY Wang XD Jiang XD Yuan HB Lv SZ Xu |
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| Institution: | aDepartment of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, China;bResearch Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China |
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| Abstract: | Two-layer ZrO2/SiO2 and SiO2/ZrO2 films were deposited on K9 glass substrates by sol–gel dip coating method. X-ray photoelectron spectroscopy (XPS) technique was used to investigate the diffusion of ZrO2/SiO2 and SiO2/ZrO2 films. To explain the difference of diffusion between ZrO2/SiO2 and SiO2/ZrO2 films, porous ratio and surface morphology of monolayer SiO2 and ZrO2 films were analyzed by using ellipsometry and atomic force microscopy (AFM). We found that for the ZrO2/SiO2 films there was a diffusion layer with a certain thickness and the atomic concentrations of Si and Zr changed rapidly; for the SiO2/ZrO2 films, the atomic concentrations of Si and Zr changed relatively slowly, and the ZrO2 layer had diffused through the entire SiO2 layer. The difference of diffusion between ZrO2/SiO2 and SiO2/ZrO2 films was influenced by the microstructure of SiO2 and ZrO2. |
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| Keywords: | ZrO2/SiO2 SiO2/ZrO2 Diffusion XPS |
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