| Pressure effects in AlAs/Inx Ga1-xAs/GaAs resonant tunnelling diodes for application in micromachined sensors |
| |
| 作者姓名： | 王建 张文栋 薛晨阳 熊继军 刘俊 谢斌 |
| |
| 作者单位： | National Key Laboratory For Electronic Measurement
Technology, North University of China, Taiyuan 030051,
China;National Key Laboratory For Electronic Measurement
Technology, North University of China, Taiyuan 030051,
China;National Key Laboratory For Electronic Measurement
Technology, North University of China, Taiyuan 030051,
China;National Key Laboratory For Electronic Measurement
Technology, North University of China, Taiyuan 030051,
China;National Key Laboratory For Electronic Measurement
Technology, North University of China, Taiyuan 030051,
China;National Key Laboratory For Electronic Measurement
Technology, North University of China, Taiyuan 030051,
China |
| |
| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant Nos 50405025 and 50375050). |
| |
| 摘 要： | This paper reports the current-voltage characteristics of 001]-oriented AlAs/InxGa1-xAs/GaAs resonant tunnelling diodes （RTDs） as a function of uniaxial external stress applied parallel to the 110] and the 1^-10] orientations, and the output characteristics of the GaAs pressure sensor based on the pressure effect on the RTDs. Under 110] stress, the resonance peak voltages of the RTDs shift to more positive voltages. For 1^-10] stress, the peaks shift toward more negative voltages. The resonance peak voltage is linearly dependent on the 110] and 1^-0] stresses and the linear sensitivities are up to 0.69 mV/MPa, -0.69 mV/MPa respectively. For the pressure sensor, the linear sensitivity is up to 0.37 mV/kPa.
|
| 关 键 词： | 谐振隧穿二极管 压力效应 微机械传感器 砷化镓 AlAs InGaAs |
| 收稿时间： | 2006-08-24 |
| 修稿时间： | 2006-08-242006-10-25 |
Pressure effects in AlAs/InxGa1-xAs/GaAs resonant tunnelling diodes for application in micromachined sensors |
| |
| Wang Jian,Zhang Wen-Dong,Xue Chen-Yang,Xiong Ji-Jun,Liu Jun and Xie Bin.Pressure effects in AlAs/Inx Ga1-xAs/GaAs resonant tunnelling diodes for application in micromachined sensors[J].Chinese Physics B,2007,16(4):1150-1154. |
| |
| Authors: | Wang Jian Zhang Wen-Dong Xue Chen-Yang Xiong Ji-Jun Liu Jun and Xie Bin |
| |
| Institution: | National Key Laboratory For Electronic Measurement Technology, North University of China, Taiyuan 030051, China |
| |
| Abstract: | This paper reports the current--voltage characteristics of
001]-oriented AlAs/InxGa1-xAs/GaAs resonant tunnelling
diodes (RTDs) as a function of uniaxial external stress applied
parallel to the 110] and the 1\bar{1}0] orientations, and the
output characteristics of the GaAs pressure sensor based on the
pressure effect on the RTDs. Under 110] stress, the resonance peak
voltages of the RTDs shift to more positive voltages. For
1\bar{1}0] stress, the peaks shift toward more negative voltages.
The resonance peak voltage is linearly dependent on the 110] and
1\bar{1}0] stresses and the linear sensitivities are up to
0.69mV/MPa, -0.69mV/MPa respectively. For the pressure sensor,
the linear sensitivity is up to 0.37mV/kPa. |
| |
| Keywords: | pressure effects RTDs micromachined sensors |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |
|
