Effects of high-dose Ge ion implantation and post-implantation annealing on ZnO thin films |
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Authors: | Xue Shu-Wen Zu Xiao-Tao Su Hai-Qiao Zheng Wan-Guo Xiang Xi Deng Hong and Yang Chun-Rong |
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Institution: | Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, China; Department of Physics, Zhanjiang Normal College, Zhanjiang 524048, China; Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, China; School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China |
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Abstract: | This paper reports that ion implantation to a dose of 1×1017
ions/cm2 was performed on c-axis-orientated ZnO thin films deposited on
(0001) sapphire substrates by the sol-gel technique. After ion implantation,
the as-implanted ZnO films were annealed in argon ambient at different
temperatures from 600-900℃. The effects of ion implantation
and post-implantation annealing on the structural and optical properties of
the ZnO films were investigated by x-ray diffraction (XRD),
photoluminescence (PL). It was found that the intensities of (002) peak and
near band edge (NBE) exitonic ultraviolet emission increased with increasing
annealing temperature from 600-900℃. The defect related deep
level emission (DLE) firstly increased with increasing annealing temperature
from 600- 750℃, and then decreased quickly with increasing
annealing temperature. The recovery of the intensities of NBE and DLE occurs
at \sim 850℃ and \sim 750℃ respectively. The relative
PL intensity ratio of NBE to DLE showed that the quality of ZnO films
increased continuously with increasing annealing temperature from 600 -
900℃. |
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Keywords: | ZnO thin films thermal annealing ion implantation photoluminescence |
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