| Low-parasitic ESD protection strategy for RF ICs in 0.35μm CMOS process |
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| 引用本文： | 王 源,贾 嵩,陈中建,吉利久.Low-parasitic ESD protection strategy for RF ICs in 0.35μm CMOS process[J].中国物理 B,2006,15(10):2297-2305. |
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| 作者姓名： | 王 源 贾 嵩 陈中建 吉利久 |
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| 作者单位： | Institute of Microelectronics, Peking University, Beijing 100871, China;Institute of Microelectronics, Peking University, Beijing 100871, China;Institute of Microelectronics, Peking University, Beijing 100871, China;Institute of Microelectronics, Peking University, Beijing 100871, China |
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| 摘 要： | A systemic and comprehensive ESD-induced parasitic model is presented in this paper, which is used to analyse the parasitic influences of electrostatic discharge （ESD） protection circuits on the performance of radio frequency applications. A novel low-parasitic ESD protection structure is made in a 0.35μm 1P3M silicide CMOS process. The measured results show that this novel structure has a low parasitic capacitance about 310fF and a low leakage current about 12.2nA with a suitable ESD robustness target about 5kV human body model.
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| 关 键 词： | 静电放电 射电频率 寄生电容 泄漏电流 |
| 收稿时间： | 2005-12-29 |
| 修稿时间： | 2005-12-292006-06-12 |
Low-parasitic ESD protection strategy for RF ICs in 0.35μm CMOS process |
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| Wang Yuan,Jia Song,Chen Zhong-Jian and Ji Li-Jiu.Low-parasitic ESD protection strategy for RF ICs in 0.35μm CMOS process[J].Chinese Physics B,2006,15(10):2297-2305. |
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| Authors: | Wang Yuan Jia Song Chen Zhong-Jian and Ji Li-Jiu |
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| Institution: | Institute of Microelectronics, Peking University, Beijing 100871, China |
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| Abstract: | A systemic and comprehensive ESD-induced parasitic model is presented in this paper,
which is used to analyse the parasitic influences of electrostatic discharge (ESD)
protection circuits on the performance of radio frequency applications. A novel
low-parasitic ESD protection structure is made in a 0.35\mum 1P3M silicide CMOS
process. The measured results show that this novel structure has a low parasitic
capacitance about 310fF and a low leakage current about 12.2nA with a suitable ESD
robustness target about 5kV human body model. |
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| Keywords: | electrostatic discharge radio
frequency parasitic capacitance leakage current |
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