DESIGN OF A 532nm Nd:YVO4/KTP SINGLE-FREQUENCY LASER |
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Authors: | Xu Chun-lin Shen Nai-cheng Zang Er-jun Sun Yi-min Lu Hai-ning Zhao Kun and Zhang Xue-bin |
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Institution: | Institute of Microelectronics, Tsinghua University, Beijing 100084, China; The Joint Laboratory of Advanced Technology in Measurements, Beijing 100013, China |
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Abstract: | A model of the laser-diode pumped solid-state laser is developed to deduce the minimum average radii of the pump beam in the solid medium, since the smaller the cavity waist, the higher the laser output power is expected to be. With an appropriate coupling system consisting of the collimating lens, prism pair and focusing lens, a diode-pumped single-frequency Nd:YVO4/KTP intracavity frequency-doubling cw laser has been demonstrated through the precise temperature control of the Nd:YVO4 crystal, the KTP crystal and the diode laser. The 532nm single-frequency output power of 40.4mW (in fact 55mW if the reflection loss of the triangular prism is taken into account) is obtained for an incident power of 515mW. It is derived theoretically and is verified in experiment that the frequency drift of the free-running laser can be reduced by increasing the cavity length. |
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Keywords: | 532nm laser single frequency Nd:YVO4 KTP |
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