| Electroluminescence from Si／SiO2 films deposited on p—Si substrates |
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| 引用本文： | 马书懿,萧勇,陈辉.Electroluminescence from Si／SiO2 films deposited on p—Si substrates[J].中国物理 B,2002,11(9):960-962. |
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| 作者姓名： | 马书懿 萧勇 陈辉 |
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| 作者单位： | Department of Physics, Northwest Normal University, Lanzhou 730070, China;Development Company of Science and Technology, Northwest Normal University, Lanzhou 730070, China;Department of Physics, Northwest Normal University, Lanzhou 730070, China |
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| 基金项目： | Project supported by the Foundation of Education Commission of Gansu Province, China (Grant No 981-17), and the Youth Foundation (Grant No 2001-26) and KJCXGC Foundation (Grant No 2001-2-14) of NWNU. |
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| 摘 要： | The structure of Au/Si/SiO2/p-Si has been fabricated using the magnetron sputtering technique. It has a very good rectifying behaviour. Visible electroluminescence (EL) has been observed from the Au/Si/SiO2/p-Si structure at a forward bias of 5V or larger. A broad band with one peak around 650－660 nm appears in all the EL spectra of the structure. The effects of the thickness of the Si layer in the Si/SiO2 films and of the input electrical power on EL spectra are studied systematically.
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| 关 键 词： | 场致发光 Si／SiO2薄膜 P－Si衬底 |
| 收稿时间： | 2002-01-19 |
Electroluminescence from Si/SiO2 films deposited on p-Si substrates |
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| Ma Shu-Yi,Xiao Yong and Chen Hui.Electroluminescence from Si/SiO2 films deposited on p-Si substrates[J].Chinese Physics B,2002,11(9):960-962. |
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| Authors: | Ma Shu-Yi Xiao Yong and Chen Hui |
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| Institution: | Department of Physics, Northwest Normal University, Lanzhou 730070, China; Development Company of Science and Technology, Northwest Normal University, Lanzhou 730070, China |
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| Abstract: | The structure of Au/Si/SiO2/p-Si has been fabricated using the magnetron sputtering technique. It has a very good rectifying behaviour. Visible electroluminescence (EL) has been observed from the Au/Si/SiO2/p-Si structure at a forward bias of 5V or larger. A broad band with one peak around 650－660 nm appears in all the EL spectra of the structure. The effects of the thickness of the Si layer in the Si/SiO2 films and of the input electrical power on EL spectra are studied systematically. |
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| Keywords: | Si/SiO2 film electroluminescence |
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