| 射频磁控溅射法制备高质量ZnO薄膜的激光特性研究 |
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| 引用本文： | 姚志刚,张希清,商红凯,滕小瑛,王永生,黄世华.射频磁控溅射法制备高质量ZnO薄膜的激光特性研究[J].中国物理 B,2005,14(6):1205-1208. |
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| 作者姓名： | 姚志刚 张希清 商红凯 滕小瑛 王永生 黄世华 |
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| 作者单位： | Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China;Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China;Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China;Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China;Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China;Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China |
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| 基金项目： | Project supported by the State Key Development Program for Basic Research of China (Grant No 2003CB314707), the National Natural Science Foundation of China (Grant No 60476005), and the Foundation of the State Education Commission of China for Returned Scholars. |
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| 摘 要： | 用射频磁控溅射方法在SiO2衬底上制备ZnO薄膜。在室温下观测到了A、B激子吸收以及在19K下发现的A、B、C激子的反射表明所制备的ZnO薄膜具有很好的纤锌矿结构。我们获得了来自于电子空穴等离子体的受激发射。进一步研究我们发现由大量窄峰所组成的激光发射，窄峰的间距都为0.5nm左右。根据理论计算，产生激光发射的自成腔的长度为31.5 μm。我们认为ZnO薄膜中产生激光发射的自成腔的形成与其六角型结构有重要关系。
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| 关 键 词： | ZnO薄膜 受激发射 吸收 |
| 收稿时间： | 2004-09-21 |
Lasing action of high quality ZnO thin film deposited by radio-frequency magnetron sputtering |
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| Yao Zhi-Gang,Zhang Xi-Qing,Shang Hong-Kai,Teng Xiao-Ying,Wang Yong-Sheng and Huang Shi-Hua.Lasing action of high quality ZnO thin film deposited by radio-frequency magnetron sputtering[J].Chinese Physics B,2005,14(6):1205-1208. |
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| Authors: | Yao Zhi-Gang Zhang Xi-Qing Shang Hong-Kai Teng Xiao-Ying Wang Yong-Sheng and Huang Shi-Hua |
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| Institution: | Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China |
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| Abstract: | ZnO thin films are deposited on SiO2 substrates by radio-frequency magnetron sputtering. A and B excitons are observed from the absorption spectra at room temperature. A, B and C excitons are observed from the reflectance spectra at 19 K. These results indicate that the obtained ZnO films have a good wurtzite structure. We obtain the stimulated emission resulting from electron-hole plasma. The lasing spectrum is observed, which consist of a large number of narrow peaks with an around 0.5 nm spacing in between, corresponding to a self-formed cavity length of around 31.5 μm. The self-formation of laser cavity in the ZnO thin film is closed related to its the hexagon structure. |
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| Keywords: | ZnO thin films stimulated emission absorption |
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