首页 | 本学科首页   官方微博 | 高级检索  
     


Analytical analysis of surface potential for grooved-gate MOSFET
Authors:Zhang Xiao-Ju  Gong Xin  Wang Jun-Ping  Hao Yue
Affiliation:Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute, Xidian University,Xi'an 710071, China
Abstract:The improvement of the characteristics of grooved-gate MOSFETs compared to the planar devices is attributed to the corner effect of the surfacepotential along the channel. In this paper we propose an analytical model of the surface potential distribution based on the solution of two-dimensional Poisson equation in cylindrical coordinates utilizing the cylinder approximation and the structure parameters such as the concave corner $theta _0 $. The relationship between the minimum surface potential and the structure parameters is theoretically analysed. Results confirm that the bigger the concave corner, the more obvious the corner effect. The corner effect increases the threshold voltage of the grooved-gate MOSFETs, so the better is the short channel effect (SCE) immunity.
Keywords:surface potential   corner effect   grooved-gate MOSFET
本文献已被 维普 等数据库收录!
点击此处可从《中国物理》浏览原始摘要信息
点击此处可从《中国物理》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号