| Growth studies of m-GaN layers on LiAlO2 by MOCVD |
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| 作者姓名： | 邹军 刘成祥 周圣明 王军 周建华 黄涛华 韩平 谢自力 张荣 |
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| 作者单位： | Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;
Graduate School of Chinese Academy of Sciences, Beijing 100039, China;Laboratory of Solid State Microstructures and Department of Physics,Nanjing University,Nanjing 210093, China;Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
;Graduate School of Chinese Academy of Sciences, Beijing 100039, China;Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;
Graduate School of Chinese Academy of Sciences, Beijing 100039, China;Laboratory of Solid State Microstructures and Department of Physics,Nanjing University, Nanjing 210093, China;Laboratory of Solid State Microstructures and Department of Physics,Nanjing University, Nanjing 210093, China;Laboratory of Solid State Microstructures and Department of Physics,Nanjing University, Nanjing 210093, China |
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| 摘 要： | This paper reports that the m-plane GaN layer is grown on （200）-plane LiAlO2 substrate by metal-organic chemical wpour deposition （MOCVD） method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer＇s thickness. The high transmittance （80%）, sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.
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| 关 键 词： | LiAlO2基底 m-平面GaN层 光学特性 半导体物理 |
| 收稿时间： | 2005-12-12 |
| 修稿时间： | 3/8/2006 12:00:00 AM |
Growth studies of m-GaN layers on LiAlO2 by MOCVD |
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| Zou Jun,Liu Cheng-Xiang,Zhou Sheng-Ming,Wang Jun,Zhou Jian-Hu,Huang Tao-Hu,Han Ping,Xie Zi-Li and Zhang Rong.Growth studies of m-GaN layers on LiAlO2 by MOCVD[J].Chinese Physics B,2006,15(11):2706-2709. |
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| Authors: | Zou Jun Liu Cheng-Xiang Zhou Sheng-Ming Wang Jun Zhou Jian-Hu Huang Tao-Hu Han Ping Xie Zi-Li and Zhang Rong |
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| Institution: | a. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China; b |
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| Abstract: | This paper reports that the $m$-plane GaN layer is grown on (200)-plane LiAlO$_{2}$
substrate by metal-organic chemical vapour deposition (MOCVD) method.
Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement
illuminates the compressive stress in the layer which is released with increasing
the layer's thickness. The high transmittance (80{\%}), sharp band edge and
excitonic absorption peak show that the GaN layer has good optical quality. The
donor acceptor pair emission peak located at $\sim$3.41\,eV with full-width at half
maximum of 120\,meV and no yellow peaks in the photoluminescence spectra partially
show that no Li incorporated into GaN layer from the LiAlO$_{2}$ substrate. |
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| Keywords: | LiAlO2 substrate $m$-plane GaN layer optical properties |
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