| Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs （100） substrates by using MOCVD |
| |
| 引用本文： | 梁松,朱洪亮,潘教青,王圩.Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs （100） substrates by using MOCVD[J].中国物理 B,2006,15(5):1114-1119. |
| |
| 作者姓名： | 梁松 朱洪亮 潘教青 王圩 |
| |
| 作者单位： | National Research Center of Optoelectronic Technology, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China;National Research Center of Optoelectronic Technology, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China;National Research Center of Optoelectronic Technology, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China;National Research Center of Optoelectronic Technology, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China |
| |
| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant No 60476009). |
| |
| 摘 要： | Self-assembled lnAs quantum dots （QDs） are grown on vicinal GaAs （100） substrates by using metal-organic chemical vapour deposition （MOCVD）. An abnormal temperature dependence of bimodal size distribution of InAs quantum dots is found. As the temperature increases, the density of the small dots grows larger while the density of the large dots turns smaller, which is contrary to the evolution of QDs on exact GaAs （100） substrates. This trend is explained by taking into account the presence of multiatoinic steps on the substrates. The optical properties of InAs QDs on vicinal GaAs（100） substrates are also studied by photoluminescence （PL） . It is found that dots on a vicinal substrate have a longer emission wavelength, a narrower PL line width and a much larger PL intensity.
|
| 关 键 词： | 自装配量子点 铟砷化物 双峰尺寸分布 MOCVD |
| 收稿时间： | 2005-10-26 |
| 修稿时间： | 2005-10-262006-02-15 |
Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (100) substrates by using MOCVD |
| |
| Liang Song,Zhu Hong-Liang,Pan Jiao-Qing and Wang Wei.Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (100) substrates by using MOCVD[J].Chinese Physics B,2006,15(5):1114-1119. |
| |
| Authors: | Liang Song Zhu Hong-Liang Pan Jiao-Qing and Wang Wei |
| |
| Abstract: | Self-assembled InAs quantum dots (QDs) are grown on vicinal GaAs (100)
substrates by using metal-organic chemical vapour deposition (MOCVD). An
abnormal temperature dependence of bimodal size distribution of InAs quantum
dots is found. As the temperature increases, the density of the small dots
grows larger while the density of the large dots turns smaller, which is
contrary to the evolution of QDs on exact GaAs (100) substrates. This trend
is explained by taking into account the presence of multiatomic steps on the
substrates. The optical properties of InAs QDs on vicinal GaAs(100)
substrates are also studied by photoluminescence (PL) . It is found that
dots on a vicinal substrate have a longer emission wavelength, a narrower PL
line width and a much larger PL intensity. |
| |
| Keywords: | self-assembled quantum dots indium arsenide bimodal
size distribution MOCVD |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |
|
