Theoretical investigation of incomplete ionization of dopants in uniform and ion-implanted 4H-SiC MESFETs |
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Authors: | Wang Shou-Guo Zhang Yi-Men and Zhang Yu-Ming |
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Institution: | Institute of Microelectronics, Xidian University, Xi'an 710071, China; Department of Electronic Science, Northwest University, Xi'an 710069, China |
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Abstract: | The effects of incomplete ionization of nitrogen in 4H-SiC have
been investigated. Poisson's equation is numerically analysed by
considering the effects of Poole--Frenkel, and the effects of
the potential on $N^+_\dd$ (the concentration of ionized donors)
and $n$ (the concentration of electrons). The pinch-off voltages
of the uniform and the ion-implanted channels of 4H-SiC
metal-semiconductor field-effect transistors (MESFETs) and
the capacitance of the gate are given at different temperatures.
Both the Poole--Frenkel effect and the potential have influence on
the pinch-off voltage $V_{\rm p}$ of 4H-SiC MESFETs. Although the
$C$-$V$ characteristics of the ion-implanted and the uniform channel of
4H-SiC MESFETs have a clear distinction, the effects of incomplete
ionization on the $C$-$V$ characteristics are not significant. |
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Keywords: | silicon carbide ion implantation pinch-off voltage $C$-$V$
characteristics |
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