Structural evolution of a-Si:H/SiO2 multilayers upon step by step thermal annealing |
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Authors: | Mei Jia-Xin Xu Jun Ma Zhong-Yuan Zhu-D Sui Yan-Ping Li Wei Li Xin Rui Yun-Jun Huang Xin-Fan and Chen Kun-Ji |
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Institution: | National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China; National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China |
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Abstract: | a-Si:H/SiO_2 multilayers were prepared by alternatively changing plasma enhanced chemical vapour deposition of a-Si:H layers and in situ plasma oxidation process. Subsequently, as-grown samples were annealed at temperatures from 350℃ to 1100℃ in N_2 ambient with an increment of 100℃. The evolution of bonding configurations and structures with annealing treatments was systematically investigated by Fourier-transform infrared spectroscopy. The peak position of Si-O stretching vibration of SiO_2 layers shift to 1087cm^{-1} after annealing at 1100℃, which demonstrates that the SiO_2 films fabricated by plasma oxidation after high temperature annealing can have similar properties to the thermal grown ones. A Si-O vibration from interfacial SiO_x was identified: the value x was found to increase as increasing the annealing temperature, which is ascribed to the cooperation of hydrogen effusion and reordering of the oxygen bond in SiO_x networks. The H-related bonds were observed in the form of H-Si-O_3 and H-Si-Si_{3-n}O_n (n=1-2) configurations, which are supposed to be present in SiO_2 and interfacial SiO_x layers, respectively. The H atoms bonded in different bonding configurations effuse at different temperatures due to their different desorption energies. |
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Keywords: | a-Si:H/SiO_2 multilayers annealing bonding configurations |
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