| Silane photoabsorption spectra mear the Si 2p thresholds：the geometry of Si 2p excited SiH4 |
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| 引用本文： | 张卫华,许如清,李家明.Silane photoabsorption spectra mear the Si 2p thresholds：the geometry of Si 2p excited SiH4[J].中国物理 B,2003,12(3):275-286. |
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| 作者姓名： | 张卫华 许如清 李家明 |
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| 作者单位： | Department of Physics, Center of Atom and Molecular Nanosciences, Tsinghua University, Beijing 100084, China;Department of Physics, Center of Atom and Molecular Nanosciences, Tsinghua University, Beijing 100084, China;Department of Physics, Center of Atom and Molecular Nanosciences, Tsinghua University, Beijing 100084, China; Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China |
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| 基金项目： | Project supported by the Ministry of Science and Technology of China, by the National Natural Science Foundation of China, Ministry of Education of China, National High-Technology Inertial Confinement Fusion Committee of China and Chinese Research Association of Atomic & Molecular Data. |
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| 摘 要： |
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| 关 键 词： | 分子物理 光吸收谱 近阈值结构 分子几何学 |
| 收稿时间： | 2002-07-12 |
Silane photoabsorption spectra near the Si 2p thresholds: the geometry of Si 2p excited SiH4 |
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| Zhang Wei-Hu,Xu Ru-Qing and Li Jia-Ming.Silane photoabsorption spectra near the Si 2p thresholds: the geometry of Si 2p excited SiH4[J].Chinese Physics B,2003,12(3):275-286. |
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| Authors: | Zhang Wei-Hu Xu Ru-Qing and Li Jia-Ming |
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| Institution: | Department of Physics, Center of Atom and Molecular Nanosciences, Tsinghua University, Beijing 100084, China; Department of Physics, Center of Atom and Molecular Nanosciences, Tsinghua University, Beijing 100084, China; Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China |
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| Abstract: | Based on the multiple-scattering self-consistent-field method, we have studied the photoabsorption spectra near the Si 2p thresholds of silane. According to our calculations, the clear assignments of the inner-shell photoabsorption spectra are provided. In comparison with the high-resolution experimental spectra, the geometric structure of the Si 2p-excited SiH_{4}^{**} is recommended to be of a C_{2v} symmetry. More specifically, the Si 2p-excited SiH_{4}^{**} have two bond lengths of 2.50 a.u. and another two bond lengths of 2.77 a.u., and the corresponding two bond angles are 104.0° and 112.5° respectively. |
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| Keywords: | molecular geometry inner-shell photoabsorption near-threshold structure silane |
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