| Nanoelectronic devices resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature |
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| 作者姓名： | 张杨 曾一平 马龙 王宝强 朱占平 王良臣 杨富华 |
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| 作者单位： | Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| 摘 要： |
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| 关 键 词： | 共振隧道效应二极管 InP衬底 分子束外延 高分辨率传输电子显微镜 |
| 收稿时间： | 2006-01-19 |
| 修稿时间： | 2/8/2006 12:00:00 AM |
Nanoelectronic devices---resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature |
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| Zhang Yang,Zeng Yi-Ping,Ma Long,Wang Bao-Qiang,Zhu Zhan-Ping,Wang Liang-Chen and Yang Fu-Hua.Nanoelectronic devices resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature[J].Chinese Physics B,2006,15(6):1335-1338. |
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| Authors: | Zhang Yang Zeng Yi-Ping Ma Long Wang Bao-Qiang Zhu Zhan-Ping Wang Liang-Chen and Yang Fu-Hua |
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| Institution: | Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | This paper reports that InAs/In共振隧道效应二极管 InP衬底 分子束外延 高分辨率传输电子显微镜resonant tunnelling diode, InP substrate, molecular beam epitaxy, high resolution transmission electron microscope2006-01-192/8/2006 12:00:00 AMThis paper reports that InAs/In0.53Ga0.47As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm^2 has been obtained for diodes with AlAs barriers of ten monolayers, and an Ino.53Ga0.47As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope. |
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| Keywords: | resonant tunnelling diode InP substrate molecular beam epitaxy high resolution transmission electron microscope |
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