A study on the electrical property of HgSe under high pressure |
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Authors: | Hao Ai-Min Gao Chun-Xiao Li Ming He Chun-Yuan Huang Xiao-Wei Zhang Dong-Mei Yu Cui-Ling Guan Rui and Zou Guang-Tian |
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Institution: | State Key Laboratory for Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China; Department of Mathematics and Physics, Hebei Normal University of Science & Technology, Qinhuangdao 066004, China |
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Abstract: | Using a microcircuit fabricated on a diamond anvil cell, we have measured
in-situ conductivity of HgSe under high pressures, and investigated the
temperature dependence of conductivity under several different pressures. The result
shows that HgSe has a pressure-induced transition sequence from a semimetal
to a semiconductor to a metal, similar to that in HgTe. Several
discontinuous changes in conductivity are observed at around 1.5, 17, 29
and 49GPa, corresponding to the phase transitions from zinc-blende to
cinnabar to rocksalt to orthorhombic to an unknown structure, respectively.
In comparison with HgTe, it is speculated that the unknown structure may be
a distorted CsCl structure. For the cinnabar-HgSe, the energy gap as a
function of pressure is obtained according to the temperature dependence of
conductivity. The plot of the temperature dependence of conductivity
indicates that the unknown structure of HgSe has an electrical property of a
conductor. |
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Keywords: | in-situ conductivity measurement phase transition high pressure |
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