| Nonlinear current－voltage characteristics of sintered tungsten－vanadium oxide |
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| 引用本文： | 刘祖黎,杨林峰,王豫,姚凯伦,王传聪.Nonlinear current－voltage characteristics of sintered tungsten－vanadium oxide[J].中国物理 B,2004,13(4):522-528. |
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| 作者姓名： | 刘祖黎 杨林峰 王豫 姚凯伦 王传聪 |
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| 作者单位： | Department of Physics and State Key Laboratory of Laser Technology, Huazhong University of Science and Technology (HUST), Wuhan 430074, China;Department of Physics and State Key Laboratory of Laser Technology, Huazhong University of Science and Technology (HUST), Wuhan 430074, China;Department of Physics and State Key Laboratory of Laser Technology, Huazhong University of Science and Technology (HUST), Wuhan 430074, China;Department of Physics and State Key Laboratory of Laser Technology, Huazhong University of Science and Technology (HUST), Wuhan 430074, China; The International Center of Materials Physics, Chinese Academy of Sciences, Shenyang 110012, China;Department of Physics and State Key Laboratory of Laser Technology, Huazhong University of Science and Technology (HUST), Wuhan 430074, China |
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| 摘 要： | We have studied the densification behaviour, microstructure and electrical properties of WO_3 ceramics with V_2O_5 as the additive ranging from 0.5 to 15mol%. Scanning electron microscopic photos indicated that the grain size of WO_3－V_2O_5 specimens is smaller than that of pure WO_3. The addition of V_2O_5 to WO_3 showed a tendency to enhance the densification rate and to restrict the grain growth. Electrical properties of all specimens were measured for different electrodes at different temperatures. The formation of the grain boundary barrier layer was confirmed by the non-ohmic I－V behaviour. The nonlinear coefficient was obtained at the current density J=0.01, 0.1 and 1mA/cm^2 for a series of WO_3－V_2O_5 samples. The V0.5mol% specimen showed an abnormal phenomenon that the nonlinear characteristics appeared at 350℃ and disappeared at lower and higher temperatures. This implies that it could be applied as a high-temperature varistor. The double Schottky barrier model was adopted to explain the phenomena for the WO_3-V_2O_5 varistors.
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| 关 键 词： | V_2O_5-WO_3 ceramics current－voltage characteristics microstructure |
| 收稿时间： | 2003-05-30 |
Nonlinear current－voltage characteristics of sintered tungsten－vanadium oxide |
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| Liu Zu-Li,Yang Lin-Feng,Wang Yu,Yao Kai-Lun and Wang Chuan-Cong.Nonlinear current－voltage characteristics of sintered tungsten－vanadium oxide[J].Chinese Physics B,2004,13(4):522-528. |
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| Authors: | Liu Zu-Li Yang Lin-Feng Wang Yu Yao Kai-Lun and Wang Chuan-Cong |
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| Institution: | Department of Physics and State Key Laboratory of Laser Technology, Huazhong University of Science and Technology (HUST), Wuhan 430074, China; Department of Physics and State Key Laboratory of Laser Technology, Huazhong University of Science and Technology (HUST), Wuhan 430074, China; The International Center of Materials Physics, Chinese Academy of Sciences, Shenyang 110012, China |
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| Abstract: | We have studied the densification behaviour, microstructure and electrical properties of WO_3 ceramics with V_2O_5 as the additive ranging from 0.5 to 15mol%. Scanning electron microscopic photos indicated that the grain size of WO_3－V_2O_5 specimens is smaller than that of pure WO_3. The addition of V_2O_5 to WO_3 showed a tendency to enhance the densification rate and to restrict the grain growth. Electrical properties of all specimens were measured for different electrodes at different temperatures. The formation of the grain boundary barrier layer was confirmed by the non-ohmic I－V behaviour. The nonlinear coefficient was obtained at the current density J=0.01, 0.1 and 1mA/cm^2 for a series of WO_3－V_2O_5 samples. The V0.5mol% specimen showed an abnormal phenomenon that the nonlinear characteristics appeared at 350℃ and disappeared at lower and higher temperatures. This implies that it could be applied as a high-temperature varistor. The double Schottky barrier model was adopted to explain the phenomena for the WO_3-V_2O_5 varistors. |
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| Keywords: | V_2O_5-WO_3 ceramics current－voltage characteristics microstructure |
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